Mobility of Two-Dimensional Hole Gas in H-Terminated Diamond-Reference-Cited by-同舟云学术

Mobility of Two-Dimensional Hole Gas in H-Terminated Diamond

Published:2018-01-17 Issue:3 Volume:12 Page:1700401
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Li Yao¹,Zhang Jin-Feng¹,Liu Gui-Peng²,Ren Ze-Yang¹,Zhang Jin-Cheng¹,Hao Yue¹

Affiliation:

1. State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies; School of Microelectronics; Xidian University; Xi'an 710071 P. R. China

2. Institute of Microelectronics; Key Laboratory for Magnetism and Magnetic Materials of MOE; School of Physical Science and Tech-nology; Lanzhou University; Lanzhou Gansu 730000 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference47 articles.

1. Electronic properties of the 2D-hole accumulation layer on hydrogen terminated diamond

2. Resistivity of chemical vapor deposited diamond films

3. Hydrogenating Effect of Single-Crystal Diamond Surface

4. Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurements

5. Origin of Surface Conductivity in Diamond

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