Growth of semipolar (10$ \bar 1\bar 3 $) InN on m -plane sapphire using MOVPE
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Reference19 articles.
1. High Power and High External Efficiencym-Plane InGaN Light Emitting Diodes
2. The Reduction of Elastic Energy Density in InN Growth on (hkl)-Oriented Planes
3. A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN
4. Surface kinetics and thermal instability of N-face InN grown by plasma-assisted molecular beam epitaxy
5. Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy
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1. MOVPE growth and high-temperature annealing of (101¯0) AlN layers on (101¯0) sapphire;Journal of Crystal Growth;2018-11
2. Surface, structural and optical properties of AlN thin films grown on different face sapphire substrates by metalorganic chemical vapor deposition;Applied Surface Science;2018-11
3. Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria-Stabilized Zirconia Using Pulsed Sputtering Deposition;physica status solidi (b);2017-09-11
4. Epitaxial growth of semipolar InN($10\bar{1}3$) on LaAlO3substrate: Epitaxial relationship analysis;Japanese Journal of Applied Physics;2017-04-20
5. Effect of V/III ratio on the growth of (112¯2) AlGaN by metalorganic vapour phase epitaxy;Journal of Crystal Growth;2016-02
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