Investigation of strain-induced phase transformation in ferroelectric transistor using metal-nitride gate electrode-Reference-Cited by-同舟云学术

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Investigation of strain-induced phase transformation in ferroelectric transistor using metal-nitride gate electrode

Published:2017-01-12 Issue:3 Volume:11 Page:1600368
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Chiu Yu-Chien¹,Cheng Chun-Hu²,Chang Chun-Yen¹³,Tang Ying-Tsan⁴,Chen Min-Cheng⁴

Affiliation:

1. Department of Electronics Engineering; National Chiao Tung University; Hsinchu 30010 Taiwan

2. Department of Mechatronic Engineering; National Taiwan Normal University; Taipei 10610 Taiwan

3. Research Center for Applied Sciences, Academia Sinica; Taipei 11529 Taiwan

4. National Nano Device Laboratory; Hsinchu 30010 Taiwan

Funder

National Science Council in Taiwan

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference32 articles.

1. Flash memory cells-an overview

2. Impact of floating gate dry etching on erase characteristics in NOR flash memory

3. Tunnel oxide thickness dependence of activation energy for retention time in SiGe quantum dot flash memory

4. Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal–insulator– semiconductor structure

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