Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czochralski-grown silicon-Reference-Cited by-同舟云学术

Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czochralski-grown silicon

Published:2017-06-27 Issue:8 Volume:11 Page:1700133
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Vaqueiro-Contreras M.¹,Markevich V. P.¹,Halsall M. P.¹,Peaker A. R.¹,Santos P.²,Coutinho J.²,Öberg S.³,Murin L. I.⁴,Falster R.⁵,Binns J.⁶,Monakhov E. V.⁷,Svensson B. G.⁷

Affiliation:

1. Photon Science Institute; University of Manchester; Manchester M13 9PL UK

2. Department of Physics and I3N; University of Aveiro, Campus Santiago; Aveiro 3810-193 Portugal

3. Department of Engineering Sciences and Mathematics; Luleå University of Technology; SE-97187 Luleå Sweden

4. Materials Research Center of NAS of Belarus; Minsk 220072 Belarus

5. SunEdison Semiconductor Ltd.; viale Gherzi 31 28100 Novara Italy

6. SunEdison Inc.; 7832 N. Leadbetter Rd. Portland Oregon 97203 USA

7. Department of Physics; SMN, University of Oslo; Oslo N-0316 Norway

Funder

Engineering and Physical Sciences Research Council

Research Centre for Solar Cell Technology (FME - Solar United)

Fundação para a Ciência e a Tecnologia

Federación Española de Enfermedades Raras

Consejo Nacional de Ciencia y Tecnología

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

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