Tb/Ni/TiN Stack for Ultralow Contact Resistive Ni‐Tb‐InGaAs Alloy to n ‐In 0.53 Ga 0.47 As Layer
Author:
Affiliation:
1. Department of Electronics Engineering, Chungnam National UniversityDaejeon 34134Korea
2. School of Integrated Technology, Yonsei UniversityIncheon 21983Korea
Funder
Ministry of Trade, Industry and Energy
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.201800131
Reference15 articles.
1. Nanometre-scale electronics with III–V compound semiconductors
2. Fundamentals of III-V Semiconductor MOSFETs
3. High mobility CMOS technologies using III–V/Ge channels on Si platform
4. In[sub 0.7]Ga[sub 0.3]As Channel n-MOSFET with Self-Aligned Ni–InGaAs Source and Drain
5. In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys
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