Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering; The University of Hong Kong; Pokfulam Road Hong Kong
2. School of Optical and Electronic Information, Huazhong University of Science and Technology; Wuhan 430074 P.R. China
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Reference25 articles.
1. Structural and electrical characteristics of Ga2O3(Gd2O3)∕GaAs under high temperature annealing
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3. Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition
4. Studies on Al/ZrO2/GaAs metal-oxide-semiconductor capacitors and determination of its electrical parameters in the frequency range of 10 kHz–1 MHz
5. Improved Interfacial and Electrical Properties of Ge-Based Metal-Oxide-Semiconductor Capacitor With LaTaON Passivation Layer
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3. Surface Passivation Using Lanthanide Oxynitrides for GaAs Metal–Oxide–Semiconductor Applications;IEEE Transactions on Electron Devices;2019-07
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