Electrical transport in C-doped GaAs nanowires: surface effects-Reference-Cited by-同舟云学术

Electrical transport in C-doped GaAs nanowires: surface effects

Published:2013-05-24 Issue:10 Volume:7 Page:890-893
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Casadei Alberto,Schwender Jil,Russo-Averchi Eleonora,Rüffer Daniel,Heiss Martin,Alarcó-Lladó Esther,Jabeen Fauzia,Ramezani Mohammad,Nielsch Kornelius,Morral Anna Fontcuberta i

Funder

The Swiss National Science Foundation

NCCR QSIT; The European Research Council under Grant “Upcon”

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201307162/fullpdf

Reference21 articles.

1. A III–V nanowire channel on silicon for high-performance vertical transistors

2. InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

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5. Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy

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