Tuning the response of non-allowed Raman modes in GaAs nanowires-Reference-Cited by-同舟云学术

Tuning the response of non-allowed Raman modes in GaAs nanowires

Published:2016-02-01 Issue:9 Volume:49 Page:095103
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Amaduzzi Francesca,Alarcón-Lladó Esther,Hautmann Hubert,Tanta Rawa,Matteini Federico,Tütüncüoǧlu Gözde,Vosch Tom,Nygård Jesper,Jespersen Thomas,Uccelli Emanuele,Fontcuberta i Morral Anna

Funder

SNF

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/49/i=9/a=095103/pdf

Reference41 articles.

1. Temperature dependence of the first-order Raman scattering by phonons in Si, Ge, andα−Sn: Anharmonic effects

2. Vibrational imaging and microspectroscopies based on coherent anti-Stokes Raman scattering microscopy

3. Raman-scattering study of the InGaN alloy over the whole composition range

4. Raman scattering characterization of Ga1−xAlxAs/GaAs heterojunctions: Epilayer and interface

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