Raman characterization of single-crystalline Ga0.96Mn0.04As:Zn nanowires realized by ion-implantation-Reference-Cited by-同舟云学术

Raman characterization of single-crystalline Ga0.96Mn0.04As:Zn nanowires realized by ion-implantation

Published:2019-05-22 Issue:33 Volume:30 Page:335202
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Corrêa Gregório B^ORCID,Kumar Sandeep^ORCID,Paschoal Waldomiro^ORCID,Devi Chandni^ORCID,Jacobsson Daniel^ORCID,Johannes Andreas^ORCID,Ronning Carsten^ORCID,Pettersson Håkan^ORCID,Paraguassu Waldeci^ORCID

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://iopscience.iop.org/article/10.1088/1361-6528/ab1bea/pdf

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4. Observation of the 4π-periodic Josephson effect in indium arsenide nanowires

5. A room temperature low-threshold ultraviolet plasmonic nanolaser

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