Si substrate preparation for the VS and VLS growth of InAs nanowires
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201307229/fullpdf
Reference14 articles.
1. Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si
2. Self-Assisted Nucleation and Vapor–Solid Growth of InAs Nanowires on Bare Si(111)
3. Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111)
4. Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy
5. InAs nanowire growth on oxide-masked 〈111〉 silicon
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