Thermal deactivation of lifetime- limiting grown-in point defects in n-type Czochralski silicon wafers-Reference-Cited by-同舟云学术

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Thermal deactivation of lifetime- limiting grown-in point defects in n-type Czochralski silicon wafers

Published:2013-08-01 Issue:9 Volume:7 Page:616-618
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Rougieux F. E.,Grant N. E.,Macdonald D.

Funder

Australian Solar Institute

Australian Renewable Energy Agency

Australian Research Council

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201308053/fullpdf

Reference16 articles.

1. High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon

2. Deep Level Transient Spectroscopy of Defects in High-Energy Light-Particle Irradiated Si

3. Intrinsic defects in silicon

4. Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon

5. The effect of oxide precipitates on minority carrier lifetime in p-type silicon

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