Electrical characterization of the slow boron oxygen defect component in Czochralski silicon-Reference-Cited by-同舟云学术

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Electrical characterization of the slow boron oxygen defect component in Czochralski silicon

Published:2015-10-28 Issue:12 Volume:9 Page:692-696
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Niewelt Tim¹,Schön Jonas¹,Broisch Juliane¹,Warta Wilhelm¹,Schubert Martin¹

Affiliation:

1. Fraunhofer Institute for Solar Energy Systems ISE; Heidenhofstraße 2 79110 Freiburg Germany

Funder

German Federal Ministry for the Environment, Nature Conservation and Nuclear Safety within BORNEO project

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference21 articles.

1. Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon

2. Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon

3. Electronic properties of the metastable defect in boron-doped Czochralski silicon: Unambiguous determination by advanced lifetime spectroscopy

4. S. Rein Lifetime Spectroscopy (Springer, Heidelberg, 2005)

5. Electronically activated boron-oxygen-related recombination centers in crystalline silicon

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