21-3: Reliability of Coplanar Oxide TFTs : Analysis and Improvement-Reference-Cited by-同舟云学术

21-3: Reliability of Coplanar Oxide TFTs : Analysis and Improvement

Published:2017-05 Issue:1 Volume:48 Page:294-296
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

Baeck Ju-Heyuck¹,Oh Saeroonter²,Lee Dohyung¹,Park Taeuk¹,Bae Jong Uk¹,Park Kwon-Shik¹,Yoon SooYong¹,Kang InByeong¹

Affiliation:

1. LG Display R&D center; 245 LG-ro, Wollong-myeon Paju-si, Gyeonggi-do 413-811 Korea

2. Division of Electrical Engineering Hanyang University; Ansan, Gyeonggi-do 15588 Korea

Publisher

Wiley

Reference5 articles.

1. 55-inch OLED TV using InGaZnO TFTs with WRGB Pixel Design;Nam;SID Symp. Dig. Tech. Paper.,2013

2. Development of oxide-TFTs structure;Bae;SID Symp. Dig. Tech. Paper.,2013

3. High Reliable a-IGZO TFTs with Self-Aligned Coplanar Structure for Large-Sized Ultrahigh-Definition OLED TV,;Ha;SID Symp. Dig. Tech. Paper.,2015

4. Effect of interface properties on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors;Oh;Applied Physics Letters (submitted)

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal Process and Dopant Diffusion Model of a-InGaZnO TFTs for V_T Prediction Using Lateral Carrier Density Profiling Technique;IEEE Electron Device Letters;2023-04

2. Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors;Advanced Electronic Materials;2022-01-07

3. Amorphous IGZO Thin-Film Transistor Gate Driver in Array for Ultra-Narrow Border Displays;IEEE Journal of the Electron Devices Society;2022

4. Depth-profiling XPS analysis of He-plasma treated amorphous InGaZnO thin films for use in top-gate coplanar thin-film transistors;Japanese Journal of Applied Physics;2019-02-11

5. (Invited) Hydrogen-Related Trap States Induced during Fabrication Process and Annealing Effects in Amorphous in-Ga-Zn-O Thin Film Transistors;ECS Transactions;2018-07-23