Affiliation:
1. EHF Key Laboratory of Fundamental Science, School of Electronic Engineering; University of Electronic Science and Technology of China; Chengdu 611731 China
Subject
Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation
Reference13 articles.
1. High-efficiency and high-power microwave amplifier using GaN-on-Si FET with improved high-temperature operation characteristics;Takenaka;IEEE Trans Microw Theory Tech,2014
2. FET statistical modeling using parameter orthogonalization;Carrol;IEEE Trans Microw Theory Tech,1996
3. Nonlinear statistical modeling and yield estimation technique for use in Monte Carlo simulations;Swidzinski;IEEE Trans Microw Theory Tech,2000
4. Statistical nonlinear model of MESFET and HEMT devices;Di Martino;IEE Proc Circ Dev Syst,2003
5. Balsi M Centurelli F Forte A Scotti G Tommasino P Trifiletti A Non-linear statistical modeling of GaAs FET integrated circuits using principal component analysis European Gallium Arsenide and other semiconductors Appl Symp 2003 Milan, Italy 49 52
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