Ku‐band GaN 100‐ W internally matched amplifier using accurate large signal model
Author:
Affiliation:
1. State Key Laboratory of Millimeter WaveSoutheast University Nanjing China
2. National Key Laboratory of Monolithic Integrated Circuits and ModulesNanjing Electronic Devices Institute Nanjing China
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/jnm.2596
Reference6 articles.
1. ImaiS MaeharaH KoyanagiM OhtsukaH OhtaA YamanakaK InoueA FukumotoH.An 80‐W packaged GaN high power amplifier for CW operation in the 13.75–14.5 GHz band In 2014 IEEE MTT‐S International Microwave Symposium (2014)
2. KanayaK SatoK KoyanagiM KoyamaH TsujiokaK OhtaA InoueA HiranoY.A Ku‐band 20 W GaN‐MMIC amplifier with built‐in linearizer In 2014 IEEE MTT‐S International Microwave Symposium (2014)
3. YamaguchiY HangaiM YamanakaK HommaY.GaN HEMT high efficiency amplifier for Microwave Wireless Power Transmission 2015 International Symposium on Radio Frequency Integration Technology. (2015)
4. Design of Ku-band GaN HEMT power amplifier based on multi-bias statistical model
5. GeQ LiuX ChenX LuoW.Design of Ku band GaN power HEMT with 3D electronmagnetic characterization 2012 International Conference on Microwave and Millimeter wave Technology. (2012)
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