P-9: Improved Electrical Stability of Double-Gate a-IGZO TFTs-Reference-Cited by-同舟云学术

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P-9: Improved Electrical Stability of Double-Gate a-IGZO TFTs

Published:2015-06 Issue:1 Volume:46 Page:1151-1154
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

He Xin¹,Wang Ling²,Deng Wei¹,Xiao Xiang²,Zhang Letao²,Leng Chuanli²,Chan Mansun³,Zhang Shengdong¹²

Affiliation:

1. Institute of Microelectronics, Peking University, Beijing, China 100871

2. School of Electronic and Computer Engineering, Peking University, Shenzhen, China 518055

3. Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong

Publisher

Wiley

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/sdtp.10035/fullpdf

Reference16 articles.

1. Oxide semiconductor thin-film transistors: A review of recent advances;Fortunato;Adv. Mater.,2012

2. Electronic structure, carrier transport, defects and impurities in amorphous oxide semiconductor;Kamiya;SID 13 Digest,2013

3. Room-temperature fabrication of transparent flexible thin film transistors using amorphous oxide semiconductors;Nomura;Nature,2004

4. Investigating the stability of zinc oxide thin film transistors;Cross;Appl. Phys. Lett.,2006

5. Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors;Suresh;Appl. Phys. Lett.,2008

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Degradation of InSnZnO Thin-Film Transistors Under Negative Bias Stress;IEEE Transactions on Electron Devices;2023-12

2. Evaluation of Positive-Bias-Stress-Induced Degradation in InSnZnO Thin-Film Transistors by Low Frequency Noise Measurement;IEEE Electron Device Letters;2022-06

3. Analytical I-V and C-V models for symmetric double-gate AOSTFTs;Semiconductor Science and Technology;2021-06-04

4. Analytical Current–Voltage Model for Double-Gate a-IGZO TFTs With Symmetric Structure for Above Threshold;IEEE Transactions on Electron Devices;2020-05

5. A threshold voltage and drain current model for symmetric dual-gate amorphous InGaZnO thin film transistors;Science China Information Sciences;2017-08-25

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