InGaP/GaAs-based multijunction solar cells-Reference-Cited by-同舟云学术

InGaP/GaAs-based multijunction solar cells

Published:2005 Issue:6 Volume:13 Page:495-511
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Takamoto Tatsuya,Kaneiwa Minoru,Imaizumi Mitsuru,Yamaguchi Masafumi

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference24 articles.

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3. Nonradiative e-h Recombination Characteristics of Mid-Gap Electron Trap in AlxGa1-xAs (x=0.4) Grown by Molecular Beam Epitaxy

4. , , . Proceedings of the 28th PVSC, 2000; 976.

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