Degradation of silicon wafers at high temperatures for epitaxial deposition-Reference-Cited by-同舟云学术

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Degradation of silicon wafers at high temperatures for epitaxial deposition

Published:2016-10 Issue:5 Volume:4 Page:344-351
ISSN:2050-0505
Container-title:Energy Science & Engineering
language:en
Short-container-title:Energy Sci Eng

Author:

Rachow Thomas¹,Reber Stefan¹,Janz Stefan¹,Knapp Marius¹,Milenkovic Nena¹

Affiliation:

1. Materials – Solar Cells and Technologies Fraunhofer ISE Heidenhofstrasse 2 79110 Freiburg Baden‐Württemberg Germany

Funder

Bundesministerium für Umwelt, Naturschutz und Reaktorsicherheit

Publisher

Wiley

Subject

General Energy,Safety, Risk, Reliability and Quality

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/ese3.130

Reference35 articles.

1. Schubert M. C.et al.2012.Modeling distribution and impact of efficiency limiting metallic impurities in silicon solar cells. Proceedings of the 38th IEEE Photovoltaic Specialists Conference Austin Texas USA Pp.286–291.

2. On the origin of rapid thermal process induced recombination centers in silicon

3. Experiments on the origin of process−induced recombination centers in silicon

4. Schwuttke G. H.1982.Crystal defect problems. Proceedings of the 16th IEEE Photovoltaic Specialists Conference San Diego CA USA Pp.327–332.

5. Statistics of the Recombinations of Holes and Electrons

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