The Impact of AlN Templates on Strain Relaxation Mechanisms during the MOVPE Growth of UVB‐LED Structures-Reference-Cited by-同舟云学术

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The Impact of AlN Templates on Strain Relaxation Mechanisms during the MOVPE Growth of UVB‐LED Structures

Published:2020-05-27 Issue:9 Volume:55 Page:1900215
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Crystal Research and Technology

Author:

Knauer Arne¹,Mogilatenko Anna¹²^ORCID,Weinrich Jonas¹²,Hagedorn Sylvia¹,Walde Sebastian¹,Kolbe Tim¹,Cancellara Leonardo³,Weyers Markus¹

Affiliation:

1. Ferdinand‐Braun‐Institut Leibniz‐Institut fuer Hoechstfrequenztechnik Gustav‐Kirchhoff‐Str. 4 Berlin 12489 Germany

2. Institute of Physics Humboldt‐University of Berlin Newtonstr. 15 Berlin 12489 Germany

3. Leibniz‐Institut fuer Kristallzuechtung Max‐Born‐Straße 2 Berlin 12489 Germany

Funder

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/crat.201900215

Reference36 articles.

1. 290 and 340 nm UV LED arrays for fluorescence detection from single airborne particles

2. III-Nitride Ultraviolet Emitters

3. Advances in group III-nitride-based deep UV light-emitting diode technology

4. Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

5. Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Toward High-Performance AlGaN-Based UV-B LEDs: Engineering of the Strain Relaxation Process;Crystal Growth & Design;2024-04-17

2. Introduction of dislocation filtering with different ammonia flows in low-temperature grown AlN (< 1200 °C);Micro and Nanostructures;2023-11

3. Role of Oxygen Incorporation in High Temperature Annealed AlGaN;physica status solidi (a);2023-04-28

4. Strain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates;Applied Physics Letters;2023-01-02

5. Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities;physica status solidi (a);2022-12-08

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