Uniformity analysis of temperature distribution in an industrial MOCVD reactor-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Uniformity analysis of temperature distribution in an industrial MOCVD reactor

Published:2016-09-08 Issue:10 Volume:51 Page:617-626
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Crystal Research and Technology

Author:

Zheng Jiang¹,Fang Haisheng¹,Zhang Zhi¹,Yang Jinzhe¹,Gan Zhiyin²,Yan Han³

Affiliation:

1. School of Energy and Power Engineering; Huazhong University of Science & Technology; Wuhan Hubei P.R.China

2. School of Mechanical Science and Engineering; Huazhong University of Science & Technology; Wuhan Hubei P.R.China

3. School of Mechanical and Electronic Engineering; Wuhan University of Technology; Wuhan Hubei P.R.China

Funder

National Natural Science Foundation of China

Major State Basic Research Development Program of China

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference15 articles.

1. Effect of thermal radiation and absorption in GaN-MOVPE growth modeling on temperature distribution and chemical state;Hirako;J. Cryst. Growth,2005

2. The influence of growth mode on quality of GaN films and blue LED wafers grown by MOCVD;Li;Physica B: Condensed Matter,2007

3. Reactor design optimization based on 3D modeling of nitrides deposition in MOCVD vertical rotating disc reactors;Mitrovic;J. Cryst. Growth,2006

4. Effect of embedding a porous medium on the deposition rate in a vertical rotating MOCVD reactor based on CFD modeling;Lin;Int. Commun. Heat Mass Transf.,2009

5. Process conditions optimization for the maximum deposition rate and uniformity in vertical rotating disc MOCVD reactors based on CFD modeling;Mitrovic;J. Cryst. Growth,2007

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Numerical Simulation of Thermal Performance of GaAs‐Metal‐Organic Chemical Vapor Deposition Reactor Based on 36 × 4 inches’ Wafers;Crystal Research and Technology;2022-02-20

2. Numerical Analysis of the High Pressure MOVPE Upside-Down Reactor for GaN Growth;Electronics;2021-06-21

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3