The influence of growth mode on quality of GaN films and blue LED wafers grown by MOCVD
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. GaN, AlN, and InN: A review
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
4. GaN Growth Using GaN Buffer Layer
5. Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE
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1. Fabrication of high-resolution active matrix driven GaN-based Micro-LED chips;Chinese Journal of Liquid Crystals and Displays;2022
2. GaN obtained on quartz substrates through the nitridation of GaAs films deposited via CSVT;Journal of Alloys and Compounds;2021-12
3. Experimental Study on Negative Capacitance and Luminous Intensity of Light-Emitting Diodes Under AC Small Signal Modulation;Journal of Electronic Materials;2021-08-16
4. Influence of Thickness of p-InGaN Layer on the Device Physics and Material Qualities of GaN-Based LEDs With p-GaN/ InGaN Heterojunction;IEEE Transactions on Electron Devices;2018-12
5. AlN/nitrided sapphire and AlN/non-nitrided sapphire hetero-structures epitaxially grown by pulsed laser deposition: A comparative study;Vacuum;2017-09
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