Effect of thermal radiation and absorption in GaN-MOVPE growth modeling on temperature distribution and chemical state
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
2. The Blue Laser Diode;Nakamura,1997
3. Decomposition and Uniformity of Material Gases in GaN MOVPE
4. Detailed models of the MOVPE process
5. Advances in the modeling of MOVPE processes
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1. Simulation of Nitride Semiconductor MOVPE;digital Encyclopedia of Applied Physics;2020-12-31
2. Influence of polymerization among Al- and Ga-containing molecules on growth rate and Al content in AlGaN;Journal of Crystal Growth;2019-06
3. Metalorganic vapor-phase epitaxial growth simulation to realize high-quality and high-In-content InGaN alloys;Journal of Crystal Growth;2019-04
4. Species transport and chemical reaction in a MOCVD reactor and their influence on the GaN growth uniformity;Journal of Crystal Growth;2016-11
5. Uniformity analysis of temperature distribution in an industrial MOCVD reactor;Crystal Research and Technology;2016-09-08
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