Selective area laser deposition of FCC beta silicon carbide-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Selective area laser deposition of FCC beta silicon carbide

Published:2016-07 Issue:7 Volume:51 Page:441-445
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Crystal Research and Technology

Author:

Paul James I.¹,Schmidt Marc J J.¹,Abram Timothy J.¹

Affiliation:

1. University of Manchester School of Mechanical; Aerospace and Civil Engineering; The University of Manchester; Manchester UK M13 9PL

Funder

Engineering and Physical Sciences Research Council

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference8 articles.

1. Thermodynamic Heat Transfer and Mass Transport Modeling of the Sublimation Growth of Silicon Carbide Crystals

2. SiC line deposition using laser CVD

3. Multiple material solid free-form fabrication by selective area laser deposition

4. Gas-phase Selective Area Laser Deposition (SALD) joining of SiC

5. Kinetic study of 3C-SiC growth on Si by pyrolyzing tetramethysilane in low pressure radio frequency-induction heated chemical vapor deposition reactor

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP