Effect of underlap length variation on DC/RF performance of dual material cylindrical MOS-Reference-Cited by-同舟云学术

Effect of underlap length variation on DC/RF performance of dual material cylindrical MOS

Published:2016-05-26 Issue:2 Volume:30 Page:e2175
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Jena B.¹,Dash S.¹,Mishra G.P.²

Affiliation:

1. Department of Electronics and Communication Engg., Device Simulation Lab, Institute of Technical Education and Research; Siksha ‘O’ Anusandhan University; Khandagiri Bhubaneswar India

2. Department of Electronics and Instrumentation Engg., Device Simulation Lab, Institute of Technical Education and Research; Siksha ‘O’ Anusandhan University; Khandagiri Bhubaneswar India

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Reference33 articles.

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3. Controlling short-channel effects in deep submicron SOI MOSFETs for improved reliability: a review;Chaudhry;IEEE Trans Device Mater Rel,2004

4. Sub-threshold behavior of triple-gate MOSFETs on SOI material sub-threshold behavior of triple-gate MOSFETs on SOI material;Lemme;Solid State Electron,2004

5. A new symmetrical double gate nanoscale MOSFET with asymmetrical side gates for electrically induced source/drain;Orouji;Microelectron Eng,2006

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