Direct extraction technique for a small-signal MOSFET equivalent circuit with substrate parameters
Author:
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. A novel approach to extracting small-signal model parameters of silicon MOSFET's
2. Direct extraction of the series equivalent circuit parameters for the small-signal model of SOI MOSFETs
3. Unique extraction of substrate parameters of common-source MOSFETs
4. Accurate high-frequency equivalent circuit model of silicon MOSFETs
5. Characteristics of deep-submicrometer MOSFET and its empirical nonlinear RF model
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1. Analysis of RF Inductive Effect in S-Parameters of Body Contact PD-SOI MOSFETs;IEEE Transactions on Electron Devices;2020-10
2. A Novel Parameter Extraction Technique of Microwave Small-Signal Model for Nanometer MOSFETS;IEEE Microwave and Wireless Components Letters;2019-11
3. A Complete Small-Signal MOSFET Model and Parameter Extraction Technique for Millimeter Wave Applications;IEEE Journal of the Electron Devices Society;2019
4. Frequency‐dependent empirical modeling for intrinsic output capacitance and conductance of HR PD‐SOI MOSFETs;Microwave and Optical Technology Letters;2018-12-28
5. A direct method to extract extrinsic capacitances of rf SOI MOSFETs using common source-body and gate-body configurations;Microwave and Optical Technology Letters;2016-09-22
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