Accurate high-frequency equivalent circuit model of silicon MOSFETs
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19990980?crawler=true&mimetype=application/pdf
Reference5 articles.
1. Extracting small-signal model parameters of silicon MOSFET transistors
2. A novel approach to extracting small-signal model parameters of silicon MOSFET's
3. Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. MOSFET Modeling;Encyclopedia of RF and Microwave Engineering;2005-04-15
2. Direct extraction technique for a small-signal MOSFET equivalent circuit with substrate parameters;Microwave and Optical Technology Letters;2003-09-10
3. Determining non-quasi-static small-signal equivalent circuit of a RF silicon MOSFET;Solid-State Electronics;2001-02
4. Analysis of scattering parameters and thermal noise of a MOSFET for its microwave frequency applications;Microwave and Optical Technology Letters;2001
5. Improved BSIM3v3 model for RF MOSFET IC simulation;Electronics Letters;2000
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