A direct method to extract extrinsic capacitances of rf SOI MOSFETs using common source-body and gate-body configurations-Reference-Cited by-同舟云学术

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A direct method to extract extrinsic capacitances of rf SOI MOSFETs using common source-body and gate-body configurations

Published:2016-09-22 Issue:12 Volume:58 Page:2851-2853
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Ahn Jahyun¹,Lee Seonghearn¹

Affiliation:

1. Department of Electronic Engineering; Hankuk University of Foreign Studies; San 89, Wangsan-ri, Mohyun-myun Yongin Kyungki-do 449-791 Korea

Funder

National Research Foundation of Korea(NRF

Ministry of Education

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. RF performance of SOI CMOS technology on commercial 200-mm enhanced signal integrity high resistivity SOI substrate;Ali;IEEE Trans Electron Dev,2014

2. A simple subcircuit extension of the BSIM3v3 model for CMOS RF design;Tin;IEEE J Solid State Circuits,2000

3. A semianalytical parameter extraction of a SPICE BSIM3v3 for RF MOSFET's using S-parameters;Lee;IEEE Trans Microwave Theory Tech,2000

4. A direct method to extract RF MOSFET model parameters using common source-gate and source-drain configurations;Lee;Microwave Opt Technol Lett,2008

5. A “thru-short-open” de-embedding method for accurate on-wafer RF measurements of nano-scale MOSFETs;Kim;J Semicond Technol Sci,2012

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gate Voltage-Dependence of Junction Capacitance in MOSFETs;IEEE Transactions on Electron Devices;2021-10

2. Frequency‐dependent empirical modeling for intrinsic output capacitance and conductance of HR PD‐SOI MOSFETs;Microwave and Optical Technology Letters;2018-12-28

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