The Effects of Localization and of Electric Fields on LO-Phonon-Exciton Coupling in InGaN/GaN Quantum Wells and Quantum Boxes-Reference-Cited by-同舟云学术

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The Effects of Localization and of Electric Fields on LO-Phonon-Exciton Coupling in InGaN/GaN Quantum Wells and Quantum Boxes

Published:2002-03 Issue:1 Volume:190 Page:149-154
ISSN:0031-8965
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Kalliakos S.,Lefebvre P.,Zhang X.B.,Taliercio T.,Gil B.,Grandjean N.,Damilano B.,Massies J.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. InGaN-based blue light-emitting diodes and laser diodes

2. and Fundamentals of Semiconductors, Physics and Material Properties, Springer, Berlin 1996.

3. Phonon-Broadened Impurity Spectra. I. Density of States

4. Free exciton emission in GaN

5. Temperature quenching of photoluminescence intensities in undoped and doped GaN

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1. Arsenic‐Induced Growth of Dodecagonal GaN Microrods with Stable a ‐Plane Walls;Advanced Optical Materials;2020-12-23

2. Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes;Journal of Applied Physics;2019-09-28

3. Physical mechanisms limiting the performance and the reliability of GaN-based LEDs;Nitride Semiconductor Light-Emitting Diodes (LEDs);2018

4. Role of defects in the thermal droop of InGaN-based light emitting diodes;Journal of Applied Physics;2016-03-07

5. Observations of exciton–surface plasmon polariton coupling and exciton–phonon coupling in InGaN/GaN quantum wells covered with Au, Ag, and Al films;Journal of Physics: Condensed Matter;2015-06-15

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