53-3: Distinguished Paper: IGZO-TFT Technology for Large-screen 8K Display
Author:
Affiliation:
1. Sharp Corporation; Mie Japan
Publisher
Wiley
Reference6 articles.
1. Spinel, YbFe2O4, and Yb2Fe3O7 types of structures for compounds in the In2O3 and Sc2O3A2O3BO systems [A: Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or Zn] at temperatures over 1000°C
2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
3. 56.1: Development of IGZO-TFT and Creation of New Devices Using IGZO-TFT
4. 8.3:Invited Paper: Advantages of IGZO Oxide Semiconductor
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Low-Voltage Operated High DC Gain Amplification Stage Based on Large-Area Manufacturable Amorphous Oxide Semiconductor Thin-Film Transistor;IEEE Transactions on Electron Devices;2023-06
2. 88‐3: Late‐News Paper: IGZO Backplane for Full‐color Electrophoretic Display;SID Symposium Digest of Technical Papers;2023-06
3. High-Speed Shift Register with Dual-Gated Thin-Film Transistors for a 31-Inch 4K AMOLED Display;Micromachines;2022-10-09
4. Highly stretchable island‐structure metal oxide thin‐film transistor arrays using acrylic adhesive for deformable display applications;Journal of the Society for Information Display;2022-06-27
5. 46‐4: High Frame Rate Scanning Backlight System For Gaming PC Display with IGZO‐TFT Technology;SID Symposium Digest of Technical Papers;2021-05
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