High‐Performance Monolayer MoS <sub>2</sub> Field‐Effect Transistors on Cyclic Olefin Copolymer‐Passivated SiO <sub>2</sub> Gate Dielectric-Reference-Cited by-同舟云学术

High‐Performance Monolayer MoS ₂ Field‐Effect Transistors on Cyclic Olefin Copolymer‐Passivated SiO ₂ Gate Dielectric

Published:2022-11-18 Issue:2 Volume:11 Page:2201653
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Advanced Optical Materials

Author:

Kalkan Sirri Batuhan¹^ORCID,Najafidehaghani Emad²,Gan Ziyang²,Drewniok Jan³,Lichtenegger Michael F.³^ORCID,Hübner Uwe⁴,Urban Alexander S.³,George Antony²^ORCID,Turchanin Andrey²^ORCID,Nickel Bert¹^ORCID

Affiliation:

1. Faculty of Physics and CeNS Ludwig‐Maximilians‐Universität Geschwister‐Scholl‐Platz 1 80539 München Germany

2. Institute of Physical Chemistry and Abbe Center of Photonics Friedrich Schiller University Jena Lessingstr. 10 07743 Jena Germany

3. Faculty of Physics Nanospectroscopy Group and Center for NanoScience Nano‐Institute Munich Ludwig‐Maximilians‐Universität München Königinstr. 10 80539 Munich Germany

4. Leibniz Institute of Photonic Technology (IPHT) Albert‐Einstein‐Str. 9 07745 Jena Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.202201653

Reference41 articles.

1. Integrated Circuits and Logic Operations Based on Single-Layer MoS2

2. 2D materials for future heterogeneous electronics