Band-like transport in high mobility unencapsulated single-layer MoS2 transistors-Reference-Cited by-同舟云学术

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Band-like transport in high mobility unencapsulated single-layer MoS2 transistors

Published:2013-04-29 Issue:17 Volume:102 Page:173107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jariwala Deep,Sangwan Vinod K.,Late Dattatray J.,Johns James E.,Dravid Vinayak P.,Marks Tobin J.,Lauhon Lincoln J.,Hersam Mark C.

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4803920

Reference44 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. MoS2 and WS2 Analogues of Graphene

3. High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects

4. Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2

5. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

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