Partially Oxidized MXene Ti 3 C 2 T x Sheets for Memristor having Synapse and Threshold Resistive Switching Characteristics-Reference-Cited by-同舟云学术

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Partially Oxidized MXene Ti 3 C 2 T x Sheets for Memristor having Synapse and Threshold Resistive Switching Characteristics

Published:2020-12-28 Issue:2 Volume:7 Page:2000866
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Sokolov Andrey¹,Ali Mumtaz²,Li Hui³,Jeon Yu‐Rim¹,Ko Min Jae³,Choi Changhwan¹^ORCID

Affiliation:

1. Division of Materials Science and Engineering Hanyang University Seoul 04763 Republic of Korea

2. Department of Organic and Nano Engineering Hanyang University Seoul 04763 Republic of Korea

3. Department of Chemical Engineering Hanyang University Seoul 04763 Republic of Korea

Funder

Korea Institute of Energy Technology Evaluation and Planning

Hanyang University

National Research Foundation

Ministry of Trade, Industry and Energy

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000866

Reference57 articles.

1. Nanoscale resistive switching devices for memory and computing applications

2. Fully memristive neural networks for pattern classification with unsupervised learning

3. Mastering the game of Go without human knowledge

4. Training and operation of an integrated neuromorphic network based on metal-oxide memristors

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4. Advances on MXene-Based Memristors for Neuromorphic Computing: A Review on Synthesis, Mechanisms, and Future Directions;ACS Nano;2024-08-07

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