Gate‐Controlled Field Emission Current from MoS 2 Nanosheets-Reference-Cited by-同舟云学术

Gate‐Controlled Field Emission Current from MoS 2 Nanosheets

Published:2020-12-28 Issue:2 Volume:7 Page:2000838
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Pelella Aniello¹^ORCID,Grillo Alessandro¹^ORCID,Urban Francesca¹^ORCID,Giubileo Filippo²^ORCID,Passacantando Maurizio³^ORCID,Pollmann Erik⁴^ORCID,Sleziona Stephan⁴^ORCID,Schleberger Marika⁴^ORCID,Di Bartolomeo Antonio¹^ORCID

Affiliation:

1. Physics Department “E.R. Caianiello” University of Salerno via Giovanni Paolo II 132 Fisciano Salerno 84084 Italy

2. CNR‐SPIN Salerno via Giovanni Paolo II 132 Fisciano 84084 Italy

3. Department of Physical and Chemical Science University of L'Aquila, and CNR‐SPIN via Vetoio Coppito L'Aquila 67100 Italy

4. Fakultät für Physik and CENIDE Universität Duisburg‐Essen Lotharstrasse 1 Duisburg D‐47057 Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000838

Reference76 articles.

1. Recent development in 2D materials beyond graphene

2. Recent development of two-dimensional transition metal dichalcogenides and their applications

3. Emerging 2D Materials and Their Van Der Waals Heterostructures

4. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

5. Large-area synthesis of monolayer WSe2 on a SiO2/Si substrate and its device applications

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