Large-area synthesis of monolayer WSe2 on a SiO2/Si substrate and its device applications-Reference-Cited by-同舟云学术

Large-area synthesis of monolayer WSe2 on a SiO2/Si substrate and its device applications

Published:2015 Issue:9 Volume:7 Page:4193-4198
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Huang Jian¹²³⁴,Yang Lei¹²³⁴,Liu Dong⁵⁶⁷³⁴,Chen Jingjing⁸⁹¹⁰¹¹,Fu Qi¹²³⁴,Xiong Yujie⁵⁶⁷³⁴,Lin Fang⁸⁹¹⁰¹¹,Xiang Bin¹²³⁴

Affiliation:

1. Department of Materials Science & Engineering

2. CAS Key Lab of Materials for Energy Conversion

3. University of Science and Technology of China

4. Hefei, P. R. China

5. Hefei National Laboratory for Physical Sciences at the Microscale

6. Collaborative Innovation Center of Chemistry for Energy Materials

7. and School of Chemistry and Materials Science

8. State Key Laboratory for Mesoscopic Physics

9. Department of Physics

10. Peking University

11. Beijing 100871, China

Abstract

Recently two-dimensional layered semiconductors with promising electronic and optical properties have opened up a new way for applications in atomically thin electronics and optoelectronics.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C4NR07045C

Reference41 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Single-layer MoS2 transistors

3. Enhanced Field-Emission Behavior of Layered MoS2Sheets

4. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

5. Ultrasensitive photodetectors based on monolayer MoS2

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