Filament Formation in TaO <i> <sub>x</sub> </i> Thin Films for Memristor Device Application: Modeling Electron Energy Loss Spectra and Electron Transport-Reference-Cited by-同舟云学术

Filament Formation in TaO _x Thin Films for Memristor Device Application: Modeling Electron Energy Loss Spectra and Electron Transport

Published:2022-10-20 Issue:1 Volume:9 Page:2200828
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Jiang Jie¹,Pachter Ruth¹^ORCID,Mahalingam Krishnamurthy¹,Ciston Jim²,Dhall Rohan²,Bondi Robert J.³,Marinella Matthew J.⁴,Telesca Donald A.⁵,Ganguli Sabyasachi¹

Affiliation:

1. Air Force Research Laboratory Materials and Manufacturing Directorate Wright‐Patterson Air Force Base Dayton OH 45433 USA

2. National Center for Electron Microscopy Molecular Foundry Lawrence Berkeley National Laboratory Berkeley CA 94720 USA

3. Quantum Generative Materials LLC Cheyenne WY 82001 USA

4. School of Electrical Computer and Energy Engineering Arizona State University Tempe AZ 85281 USA

5. Air Force Research Laboratory Information Directorate Rome NY 13441 USA

Funder

Air Force Research Laboratory

Office of Science

U.S. Department of Energy

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200828

Reference60 articles.

1. The missing memristor found

2. Memristor-The missing circuit element

3. Memristive switching mechanism for metal/oxide/metal nanodevices

4. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

5. Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

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