Current Rectification, Resistive Switching, and Stable NDR Effect in BaTiO 3 /CeO 2 Heterostructure Devices-Reference-Cited by-同舟云学术

Current Rectification, Resistive Switching, and Stable NDR Effect in BaTiO 3 /CeO 2 Heterostructure Devices

Published:2021-05-09 Issue:6 Volume:7 Page:2001237
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Rehman Shania¹,Kim Honggyun¹,Patil Harshada¹²,Kadam Kalyani D.¹²,Sagar Rizwan Ur Rehman³,Aziz Jamal¹²,Um Doo‐Seung¹,Khan Muhammad Farooq¹^ORCID,Kim Deok‐kee¹²^ORCID

Affiliation:

1. Department of Electrical Engineering Sejong University 209 Neungdong‐ro Gwangjin‐gu Seoul 05006 South Korea

2. Department of Convergence Engineering for Intelligent Drone Sejong University Seoul 05006 South Korea

3. College of Rare Earths Jiangxi University of Science and Technology Ganzhou 341000 P. R. China

Funder

Ministry of Trade, Industry and Energy

National Research Foundation of Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202001237

Reference56 articles.

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3. 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory

4. A 1D Vanadium Dioxide Nanochannel Constructed via Electric-Field-Induced Ion Transport and its Superior Metal-Insulator Transition

5. Resistive Switching in Solution-Processed Copper Oxide (CuxO) by Stoichiometry Tuning

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