Resistive Switching in Solution-Processed Copper Oxide (CuxO) by Stoichiometry Tuning-Reference-Cited by-同舟云学术

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Resistive Switching in Solution-Processed Copper Oxide (CuxO) by Stoichiometry Tuning

Published:2018-05-01 Issue:20 Volume:122 Page:11076-11085
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Rehman Shania¹^ORCID,Hur Ji-Hyun¹,Kim Deok-kee¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea

Funder

UNKNOWN

Ministry of Trade, Industry and Energy

IDEC

Korea Semiconductor Research Consortium

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.8b00432

Reference75 articles.

1. Nanoionics-based resistive switching memories

2. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

4. Nanoscale resistive switching devices: mechanisms and modeling

5. Memristive devices for computing

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1. Complementary resistive switching characteristics of solid electrolyte chalcogenide AgxTe nanoparticles for high-density crossbar random access memory;Materials Today Nano;2024-12

2. Onset and microscopic origin of resistive random-access memory characteristics on low-cost thermally treated mixed phase CuxO (x = 1,2) on Cu sheet;Journal of Physics and Chemistry of Solids;2024-10

3. Characterization of CuO Thin Films Based Memristive Devices for Resistive Random-Access Memory;2024 IEEE 9th International Conference for Convergence in Technology (I2CT);2024-04-05

4. Temperature dependent resistivity switching in CuxO thin films chemically synthesized from high pressure plasma-deposited copper iodide;Next Materials;2024-04

5. Structural phase transition and resistive switching properties of Cu_xO films during post-thermal annealing;Nanotechnology;2024-02-12

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