Experimental and First‐Principles Study of Visible Light Responsive Memristor Based on CuAlAgCr/TiO2/W Structure for Artificial Synapses with Visual Perception

Author:

Liu Xiaoyan12ORCID,Yu Jinghao1,Ye Pengfei3,Gu Liang3,Qin Haiming1,Wang Ning4ORCID,Li Hang5,Wang Yu3ORCID,Zhang Miaocheng3,He Nan3,Wan Xiang1ORCID,Lian Xiaojuan1,Hu Er‐Tao3ORCID,Tong Yi1,Wang Lei1

Affiliation:

1. College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing 210023 China

2. Huzhou Intelligent Technology Co., Ltd. Huzhou 313000 China

3. College of Electronic and Optical Engineering Nanjing University of Posts and Telecommunications Nanjing 210023 China

4. School of Science Key Laboratory of High Performance Scientific Computation Xihua University Chengdu 610039 China

5. Institute of Advanced Materials (IAM) Nanjing University of Posts and Telecommunications Nanjing 210023 China

Abstract

AbstractThe development of vision bionic systems is indispensable for the perception, memory, and processing of optical signals, which promotes the exploration of efficient visual perception systems. In this work, a simple and novel two‐terminal optoelectronic memristor based on the CuAlAgCr/TiO2/W (CTW) structure is prepared, where the CuAlAgCr high‐entropy alloys are employed as the top electrode for the first time. Before annealing, the CTW optoelectronic memristor exhibited fascinating performance, including uniformly distributed operating voltage, reliable data retention, and a higher switching ratio. Moreover, the optoelectronic memristor can be reversibly switched between volatile and nonvolatile memories by adjusting compliance currents. The CTW optoelectronic memristor annealed in air exhibits various artificial synaptic functions, such as short‐term memory, optical learning, and forgetting behavior under the illumination of the laser. The photo‐response current is increased from nano‐ampere to micro‐ampere level. Furthermore, a logic function unit based on CTW optoelectronic memristor is proposed, which realizes “AND” operation. Furthermore, first‐principles calculations of the CTW structure are performed to describe the influence of photocarriers on the barrier height at the CuAlAgCr‐TiO2 interface, revealing the working mechanism of the CTW optoelectronic memristor. This work has greatly facilitated the development of optically operated artificial synaptic devices and vision bionic systems.

Funder

National Natural Science Foundation of China

Natural Science Research of Jiangsu Higher Education Institutions of China

Natural Science Foundation of Jiangsu Province

Nanjing University of Posts and Telecommunications

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

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