Effects of Counter‐Ion Size on Delocalization of Carriers and Stability of Doped Semiconducting Polymers-Reference-Cited by-同舟云学术

Effects of Counter‐Ion Size on Delocalization of Carriers and Stability of Doped Semiconducting Polymers

Published:2020-10-28 Issue:12 Volume:6 Page:2000595
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Thomas Elayne M.¹^ORCID,Peterson Kelly A.¹^ORCID,Balzer Alex H.²^ORCID,Rawlings Dakota³^ORCID,Stingelin Natalie²^ORCID,Segalman Rachel A.¹³^ORCID,Chabinyc Michael L.¹^ORCID

Affiliation:

1. Materials Department University of California Santa Barbara Santa Barbara CA 93106–5050 USA

2. School of Materials Science and Engineering and School of Chemical & Biomolecular Engineering Georgia Institute of Technology Atlanta GA 30332 USA

3. Department of Chemical Engineering University of California Santa Barbara Santa Barbara CA 93106–5050 USA

Funder

National Science Foundation

Materials Research Science and Engineering Center, Harvard University

U.S. Department of Energy

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000595

Reference49 articles.

1. Controlling Molecular Doping in Organic Semiconductors

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4. Chemical derivatization of an array of three gold microelectrodes with polypyrrole: fabrication of a molecule-based transistor

5. Conjugated Polymers for Assessing and Controlling Biological Functions

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