Dopant‐induced Morphology of Organic Semiconductors Resulting in High Doping Performance

Author:

Guo Jing12,Chen Ping‐An134,Yang Shuzhang5,Wei Huan34,Liu Yu34,Xia Jiangnan34,Chen Chen6,Chen Huajie7,Wang Suhao8,Li Wenwu5,Hu Yuanyuan134ORCID

Affiliation:

1. Changsha Semiconductor Technology and Application Innovation Research Institute College of Semiconductors (College of Integrated Circuits) Hunan University Changsha 410082 China

2. School of Physics and Information Engineering Shanxi Normal University Taiyuan 031000 China

3. Shenzhen Research Institute of Hunan University Shenzhen 518063 China

4. International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province School of Physics and Electronics Hunan University Changsha 410082 China

5. Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception Institute of Optoelectronics Department of Materials Science Fudan University Shanghai 200433 China

6. Science and Technology on Advanced Ceramic Fibers and Composites Laboratory College of Aerospace Science and Engineering National University of Defense Technology Changsha 410000 China

7. Key Laboratory of Environmentally Friendly Chemistry and Applications of Ministry of Education College of Chemistry Xiangtan University Xiangtan 411105 China

8. Unité de Dynamique et Structure des Matériaux Moléculaires (UDSMM) Université du Littoral Côte d'Opale 145 Avenue Maurice Schumann Dunkerque 59140 France

Abstract

AbstractDoping plays a crucial role in modulating and enhancing the performance of organic semiconductor (OSC) devices. In this study, the critical role of dopants is underscored in shaping the morphology and structure of OSC films, which in turn profoundly influences their properties. Two dopants, trityl tetrakis(pentafluorophenyl) (TrTPFB) and N,N‐dimethylanilinium tetrakis(pentafluorophenyl)borate (DMA‐TPFB), are examined for their doping effects on poly(3‐hexylthiophene) (P3HT) and PBBT‐2T host OSCs. It is found that although TrTPFB exhibits higher doping efficiency, OSCs doped with DMA‐TPFB achieve comparable or even enhanced electrical conductivity. Indeed, the electrical conductivity of DMA‐TPFB‐doped P3HT reaches over 67 S cm−1, which is a record‐high value for mixed‐solution‐doped P3HT. This can be attributed to DMA‐TPFB inducing a higher degree of crystallinity and reduced structural disorder. Moreover, the beneficial impact of DMA‐TPFB on the OSC films' morphology and structure results in superior thermoelectric performance in the doped OSCs. These findings highlight the significance of dopant‐induced morphological and structural considerations in enhancing the film characteristics of OSCs, opening up a new avenue for optimization of dopant performance.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Natural Science Foundation of Hunan Province

Science, Technology and Innovation Commission of Shenzhen Municipality

Agence Nationale de la Recherche

Publisher

Wiley

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3