Ion‐Exchange Doping of Semiconducting Single‐Walled Carbon Nanotubes

Abstract

AbstractSemiconducting single‐walled carbon nanotubes (SWCNTs) are a promising thermoelectric material with high power factors after chemical p‐ or n‐doping. Understanding the impact of dopant counterions on charge transport and thermoelectric properties of nanotube networks is essential to further optimize doping methods and to develop better dopants. This work utilizes ion‐exchange doping to systematically vary the size of counterions in thin films of small and large diameter, polymer‐sorted semiconducting SWCNTs with AuCl3 as the initial p‐dopant and investigates the impact of ion size on conductivity, Seebeck coefficients, and power factors. Larger anions are found to correlate with higher electrical conductivities and improved doping stability, while no significant effect on the power factors is found. Importantly, the effect of counterion size on the thermoelectric properties of dense SWCNT networks is not obscured by morphological changes upon doping. The observed trends of carrier mobilities and Seebeck coefficients can be explained by a random resistor model for the nanotube network that accounts for overlapping Coulomb potentials leading to the formation of an impurity band whose depth depends on the carrier density and counterion size. These insights can be applied more broadly to understand the thermoelectric properties of doped percolating disordered systems, including semiconducting polymers.