WSe 2 N‐Type Negative Capacitance Field‐Effect Transistor with Indium Low Schottky Barrier Contact
Author:
Affiliation:
1. State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China
2. National Integrated Circuit Innovation Center No. 825 Zhangheng Road Shanghai 201203 China
Funder
National Key Research and Development Program of China
Publisher
Wiley
Subject
Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100829
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