All‐Solid‐State Oxygen Ion Electrochemical Random‐Access Memory for Neuromorphic Computing-Reference-Cited by-同舟云学术

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All‐Solid‐State Oxygen Ion Electrochemical Random‐Access Memory for Neuromorphic Computing

Published:2021-04-16 Issue:5 Volume:7 Page:2100142
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Nikam Revannath Dnyandeo¹²^ORCID,Kwak Myonghoon¹²^ORCID,Hwang Hyunsang¹²^ORCID

Affiliation:

1. Center for Single Atom‐based Semiconductor Device Pohang University of Science and Technology (POSTECH) Pohang 790‐784 Republic of Korea

2. Department of Material Science and Engineering Pohang University of Science and Technology (POSTECH) Pohang 790‐784 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100142

Reference54 articles.

1. The future of electronics based on memristive systems

2. A million spiking-neuron integrated circuit with a scalable communication network and interface

3. The Blue Brain Project

4. Emerging Artificial Synaptic Devices for Neuromorphic Computing

5. Low Power, CMOS-MoS2 Memtransistor based Neuromorphic Hybrid Architecture for Wake-Up Systems

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4. Complementary memtransistors for neuromorphic computing: How, what and why;Journal of Semiconductors;2024-06-01

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