Highly Flexible and Asymmetric Hexagonal‐Shaped Crystalline Structured Germanium Dioxide‐Based Multistate Resistive Switching Memory Device for Data Storage and Neuromorphic Computing-Reference-Cited by-同舟云学术

Highly Flexible and Asymmetric Hexagonal‐Shaped Crystalline Structured Germanium Dioxide‐Based Multistate Resistive Switching Memory Device for Data Storage and Neuromorphic Computing

Published:2022-06-25 Issue:10 Volume:8 Page:2200332
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Chougale Mahesh Y.¹^ORCID,Khan Muhammad Umair¹²³^ORCID,Kim Jungmin¹^ORCID,Furqan Chaudhry Muhammad⁴⁵^ORCID,Saqib Qazi Muhammad¹,Shaukat Rayyan Ali¹^ORCID,Patil Swapnil R.¹,Mohammad Baker²³,Kwok Hoi‐Sing⁴⁵,Bae Jinho¹^ORCID

Affiliation:

1. Department of Ocean System Engineering Jeju National University 102 Jejudaehakro Jeju 63243 South Korea

2. Department of Electrical Engineering and Computer Science Khalifa University Abu Dhabi 127788 UAE

3. System on Chip Center Khalifa University Abu Dhabi 127788 UAE

4. Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Clear Water Bay Kowloon Hong Kong China

5. State Key Laboratory on Advanced Displays and Optoelectronics Technologies The Hong Kong University of Science and Technology Clear Water Bay Kowloon Hong Kong China

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200332

Reference62 articles.

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