Large and Tunable Magnetoresistance in Cr 1− x Te/Al 2 O 3 /Cr 1− x Te Vertical Spin Valve Device-Reference-Cited by-同舟云学术

Large and Tunable Magnetoresistance in Cr ₁₋ _x Te/Al ₂ O ₃ /Cr ₁₋ _x Te Vertical Spin Valve Device

Published:2022-10-17 Issue:1 Volume:9 Page:2200823
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

gao Zhansheng¹,Chen Jiabiao¹,Zhang Zheshan¹,Liu Zhaochao¹,Zhang Yu¹,Xu Lingyun¹,Wu Jinxiong¹^ORCID,Luo Feng¹

Affiliation:

1. Tianjin Key Lab for Rare Earth Materials and Applications Center for Rare Earth and Inorganic Functional Materials Smart Sensor Interdisciplinary Science Center School of Materials Science and Engineering Nankai University Tianjin 300350 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200823

Reference43 articles.

1. The era of hyper-scaling in electronics

2. Memory applications from 2D materials

3. Recent Advances in Two-Dimensional Spintronics

4. Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications

5. Spintronic devices: a promising alternative to CMOS devices

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