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Memory applications from 2D materials

Published:2021-06 Issue:2 Volume:8 Page:021306
ISSN:1931-9401
Container-title:Applied Physics Reviews
language:en
Short-container-title:Applied Physics Reviews

Author:

Chiang Chin-Cheng¹²^ORCID,Ostwal Vaibhav¹²^ORCID,Wu Peng¹²^ORCID,Pang Chin-Sheng¹²^ORCID,Zhang Feng¹²³,Chen Zhihong¹²^ORCID,Appenzeller Joerg¹²^ORCID

Affiliation:

1. Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA

2. Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA

3. Intel Corporation, Santa Clara, California 95054, USA

Funder

Semiconductor Research Corporation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0038013

Reference107 articles.

1. Moore's law: the future of Si microelectronics

2. Single-layer MoS2 transistors

3. Black phosphorus field-effect transistors

4. MoS 2 transistors with 1-nanometer gate lengths

5. Memory leads the way to better computing

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1. Strong ferroelectricity in one-dimensional materials self-assembled by superatomic metal halide clusters;Frontiers of Physics;2024-08-19

2. A Study on h‐BN Resistive Switching Temporal Response;Advanced Electronic Materials;2024-06-21

3. Nature of point defects in monolayer MoS2 and the MoS2/Au(111) heterojunction;Journal of Applied Physics;2024-05-02

4. Emulating biological synaptic characteristics of HfOx/AlN-based 3D vertical resistive memory for neuromorphic systems;The Journal of Chemical Physics;2024-04-08

5. 2D Materials for Photothermoelectric Detectors: Mechanisms, Materials, and Devices;Advanced Functional Materials;2024-01-26

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