High‐Throughput Exploration of Phase Evolution in (Pb1−XBaX)ZrO3 Thin Films

Abstract

AbstractAntiferroelectric thin films hold significant potential for bringing novel physics phenomena and fascinating properties. Their applications are often intertwined with the antiferroelectric‐ferroelectric phase transition, which is contingent on the chemical compositions of the constituent material. Nevertheless, the prevailing trial‐and‐error‐based research methodology is ill‐suited for the exploration of the relationship between chemical compositions and the antiferroelectric‐ferroelectric phase transition. To address this challenge, a high‐throughput synthesis strategy for antiferroelectric thin films is presented, which is enabled by an advanced high‐throughput pulsed laser deposition technology. The effectiveness of this synthesis strategy using (Pb1−XBaX)ZrO3 and achieving precise control over the parameter X is showcased. This approach allows for the deposition of (Pb1−XBaX)ZrO3 thin films encompassing nine chemical compositions ranging from X = 0 to X = 0.08. Based on this high‐throughput method, the composition that corresponds to the phase transition of (Pb1−XBaX)ZrO3, falling within the range of X = 0.04 to X = 0.06 is pinpointed. Furthermore, a temperature‐dependent correlation between the phase transition and chemical composition is established. This work not only presents a practical routine for establishing a comprehensive map of material chemical composition in relation to the properties of antiferroelectric thin films but also offers a method for the high‐throughput exploration of complex oxide thin films.