Tunable Volatile to Non‐Volatile Resistive Switching in PbZrO <sub>3</sub> Antiferroelectric Thin Film for Neuromorphic Computing-Reference-Cited by-同舟云学术

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Tunable Volatile to Non‐Volatile Resistive Switching in PbZrO ₃ Antiferroelectric Thin Film for Neuromorphic Computing

Published:2022-06-26 Issue:21 Volume:9 Page:2201005
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv Materials Inter

Author:

Lv Zonglin¹,Wang Hongwei¹,Cao Jinpeng¹,Zhang Chao¹,Zhao Gaolei²,Yu Richeng³,Zhang Bo¹,Xu Xiaoguang¹,Jiang Yong¹,Miao Jun¹^ORCID

Affiliation:

1. School of Materials Science and Engineering University of Science and Technology Beijing Beijing 100083 China

2. Institute of Acoustics Chinese Academy of Sciences Beijing 100190 China

3. Institute of Physics Chinese Academy of Sciences Beijing 100080 China

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202201005

Reference60 articles.

1. HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

2. Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays

3. Publisher Correction: Memory devices and applications for in-memory computing

4. In-memory computing with resistive switching devices

5. Nonlinearity in Memristors for Neuromorphic Dynamic Systems

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High‐Throughput Exploration of Phase Evolution in (Pb_1−XBa_X)ZrO₃ Thin Films;Advanced Electronic Materials;2024-01-12

2. Resistive switching in tetragonal tungsten bronze Sr0.6Ba0.4Nb2O6 thin films and control of Schottky barrier by insertion of BiFeO3 layer;Materials Today Communications;2023-12

3. Polarization-field tuning and stable performance of the resistance switching in a ferroelectric/amorphous PbZr0.2Ti0.8O3/La2Zr2O7 heterostructure;Journal of Materials Science: Materials in Electronics;2023-06

4. A ferroelectric memristor with a capacitor-like structure for neuromorphic computing;Journal of Physics D: Applied Physics;2023-03-02

5. Bioderived materials for stimuli-responsive, adaptive, and neuromorphic systems: A perspective;Journal of Composite Materials;2022-11-08

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