Resistive switching in tetragonal tungsten bronze Sr0.6Ba0.4Nb2O6 thin films and control of Schottky barrier by insertion of BiFeO3 layer

Author:

Cao J.P.,Lv Z.L.,Wang H.W.,Wu J.K.,Lin K.,Li Q.,Chen X.,Li X.H.,Li Q.H.,Cao Y.L.,Deng J.X.,Miao Jun

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference45 articles.

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3. High-performance photovoltaic readable ferroelectric nonvolatile memory based on La-doped BiFeO(3) films;Li;ACS Appl. Mater. Interfaces,2018

4. Giant ferroelectric resistance switching controlled by a modulatory terminal for low-power neuromorphic in-memory computing;Xue;Adv. Mater.,2021

5. Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing;Wang;Nat. Mater.,2016

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