High-Performance Photovoltaic Readable Ferroelectric Nonvolatile Memory Based on La-Doped BiFeO3 Films
Author:
Affiliation:
1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300350, People’s Republic of China
Funder
National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.8b06246
Reference39 articles.
1. Giant tunnel electroresistance for non-destructive readout of ferroelectric states
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4. Understanding the Nature of Ultrafast Polarization Dynamics of Ferroelectric Memory in the Multiferroic BiFeO3
5. Impact of Bi Deficiencies on Ferroelectric Resistive Switching Characteristics Observed at p-Type Schottky-Like Pt/Bi1-δFeO3 Interfaces
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